Research: Ammonothermal Synthesis

Ammonothermal Synthesis and Intermediates

The project aims to clarify the chemistry of the crystal growth of nitrides from supercritical ammonia depending on temperature and pressure as well as startingmaterials, concentrations and further dissolved species (pH value, ammono acidic, ammono basic). The work focuses exemplary on the formation of GaN, later the work will be broadened to further nitride-based semiconductors as InN and Zn2N3. Special attention is on the characterization of intermediates in ammonia. The main goal is an improved understanding of the involved species in the dissolution/precipitation process of the crystal growth to provide the cooperation partners within the DFG research unit FOR1600 "Chemistry and Technology of Ammonothermal Synthesis of Nitrides" information for a systematic process advancement to enhance the crystal quality.


Tensieudiometer, autoklav and autoklav station (schematical) for crystal growth of nitride semiconductor materials as well as intermediates (right).