Ammonothermal synthesis of semiconductors and their intermediates

The project aims to clarify the chemistry of the nitride synthesis and crystal growth from supercritical ammonia depending on temperature and pressure as well as starting materials, concentrations and further dissolved species (pH value, ammono acidic, ammono basic). The work originally focused exemplary on the formation of GaN, later the work was broadened to further nitride-based semiconductors as InN and Zn₂N₃. Special attention is on the characterization of intermediates in ammonia. The main goal is an improved understanding of the involved species in the dissolution/precipitation process of the crystal growth to enhance the product and crystal quality.