AK Schleid

Frau  M. Sc.
Sheng-Han "Susan" Su

Dieses Bild zeigt  Sheng-Han "Susan"Su
Telefon0711 685-64247
Telefax0711 685-64241
Universität Stuttgart
Institut für Anorganische Chemie
Pfaffenwaldring 55
70569 Stuttgart

Untersuchungen zum Anorganischen Antenneneffekt in Lanthanoid-Oxidochalkogenat Materialien

[9] H.-L. Liu, C.-C. Shen, S.-H. Su, C.-L. Hsu, M. -Y. Li, and L.-J. Li, "Optical properties of monolayer transition metal dichalcogenides probed by spectroscopic ellipsometry", Appl. Phys. Lett. 105 (2014) 201905.
[8] M.-L. Tsai, S.-H. Su, J.-K. Chang, D.-S. Tsai, C.-H. Chen, C.-I Wu, L.-J. Li, L.-J. Chen, and J.-H. He "Monolayer MoS2 heterojunction solar cells", ACS Nano 8 (2014) 8317.
[7] S.-H. Su, W.-T. Hsu, C.-L. Hsu, C. -H. Chen, M.-H. Chiu, Y. -C. Lin, W.-H. Chang, K. Suenaga, J.-H. He, and L.-J. Li, "Controllable synthesis of band-gap-tunable and monolayer transition-metal dichalcogenide alloys", Front. Energy Res. 2 (2014) 27.
[6] S.-H. Su, Y.-T. Hsu, Y.-H. Chang, M.-H. Chiu, C.-L. Hsu, W.-T. Hsu, W.-H. Chang, J.-H. He, and L.-J. Li, "Band Gap-Tunable Molybdenum Sulfide Selenide Monolayer Alloy", Small 10 (2014) 2589.
[5] D.-S. Tsai, D.-H. Lien, M.-L. Tsai, S.-H. Su, K.-M. Chen, J.-J. Ke, Y.-C. Yu, L.-J. Li, and J.-H. He, "Trilayered MoS Metal–Semiconductor–Metal Photodetectors: Photogain and Radiation Resistance", Selected Topics in Quantum Electronics, IEEE Journal 20 (2014) 30.
[4] S-H. Su, S.-J. Huang, Y.-K. Su, and H.-C. Hsu, "Enhancement of Optical Polarization Anisotropy of a-Plane InGaN/GaN Multiple Quantum Well Structure from Violet to Blue-Green Light", Jpn. J. Appl. Phys. 52 (2013) 01AG01.
[3] S.-H. Su: "Investigation of Nonpolar GaN-based Materials and Devices by MOCVD" Bachelorarbeit, National Cheng Kung University (NCKU), Tainan, Taiwan (2012).
[2] T.-M. Pan, L.-C. Yen and S.-H. Su, "Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics", Appl. Surf. Sci. 256 (2009) 1534.
[1] T.-M. Pan, C.-W. Lin, J.-C. Lin, S.-H. Su, H.-M. Kuo and Y.-K.Chien: "Influence of oxygen content on the structural and pH-sensitive properties of thin Nd2O3 electrolyte-insulator-semiconductor", Sensors IEEE 262-265 (2009) 262.


[3] S.-H. Su, S.-J. Huang, H.-C. Hsu, C.-Y. Lin, Y.-K. Su, "Enhancement of optical polarization anisotropy of a-plane InGaN/GaN Mutiple Quantum Wells Structure from Violet to Blue-green Light", International Symposium on Advanced Plasma Science and its Applications for Nitrdes and Nanomaterials (2012 ISPlasma) Aichi, Japan, March 4-8, 2012
[2] S.-H. Su, C.-Y. Lin, H.-C. Hsu, J.-H. Hong, S.-J. Huang, and Y.-K. Su, "High responsivity a-plane InGaN/GaN multiple-quantum well metal-semiconductor-metal photodetector with recess electrode" 2011 ISCS Berlin, Germany, May 22-26, 2011.
[1] T.-M. Pan, C.-J. Chang, C.-L. Chan, S.-H. Su, and W.-C.Lin, "CF 4 plasma treated poly-Si film by PECVD for high-k PrTiO3 poly-Si TFTs", 2009 ISDR MD, USA, Dec. 09-11, 2009